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白光发光二极管被誉为第4代照明光源。ZnO纳米结构因含有大量本征和/或非本征缺陷使其除出现在紫外区域的带边发射外还能产生覆盖400—700 nm可见光范围的深能级发光,从而可用于白光LED。本文系统地介绍了将ZnO纳米结构应用于白光LED的几种器件构造,并评述了各自的性能特点和研究进展。因为直接基于ZnO纳米结构电致发光的白光LED需要施加较高的偏压,所以将ZnO纳米结构与p型半导体复合制成异质结成为了研究的热点。ZnO纳米结构的制备方法和形貌特性会影响白光LED性能,对ZnO纳米结构进行掺杂是提升性能的重要手段。此外,将ZnO纳米材料和聚合物的优点集于一体的ZnO/聚合物异质结构也在白光LED中具有广阔的发展空间。最后,指出了纳米ZnO在白光LED应用中存在的问题和今后的发展方向。
White light-emitting diodes known as the 4th generation lighting source. The ZnO nanostructures, which contain a large number of intrinsic and / or extrinsic defects, enable deep-level emission covering the visible range of 400-700 nm in addition to the band-edge emission occurring in the ultraviolet region for use with white LEDs. This article systematically introduced the ZnO nanostructures used in several white LED device structure, and commented on their performance characteristics and research progress. Because the white LED based on ZnO nanostructures directly needs to be applied with high bias voltage, it is a research hotspot to make ZnO nanostructures and p-type semiconductors into heterojunction. The preparation method and morphology of ZnO nanostructures will affect the performance of white LEDs. The doping of ZnO nanostructures is an important means to improve the performance. In addition, the ZnO / polymer heterostructure, which combines the advantages of ZnO nanomaterials and polymers, has broad space for development in white LEDs. Finally, the problems existing in the application of nano-ZnO in white LED and the future development direction are pointed out.