Strain effects on optical polarisation properties in (11■2) plane GaN films

• 作 者: 郝国栋 陈涌海 范亚明 黄晓辉 王怀兵
• 机 构: Nano-Devices and Materials Division,Suzhou Institute of Nano-tech and Nano-bionics,Chinese Academy o
• 出 处: Chinese Physics B
• 发表日期: 2004年期
• 关键词: Hamiltonian anisotropic perturbation arbitrary Strain switching dramatic coordin

We present the theoretical results of the electronic band structure of wurtzite GaN films under biaxial strains in the (11■2)-plane.The calculations are performed by the k · p perturbation theory approach through using the effective-mass Hamiltonian for an arbitrary direction.The results show that the transition energies decrease with the biaxial strains changing from 0.5% to 0.5%.For films of (11■2)-plane,the strains are expected to be anisotropic in the growth plane.Such anisotropic strains give rise to valence band mixing which results in dramatic change in optical polarisation property.The strain can also result in optical polarisation switching phenomena.Finally,we discuss the applications of these properties to the (11■2) plane GaN-based light-emitting diode and lase diode.

We present the theoretical results of the electronic band structure of wurtzite GaN films under biaxial in in the (11 ■ 2) -plane. These calculations are performed by the k · p perturbation theory approach through using the effective-mass Hamiltonian for an arbitrary direction The results show that the transition energies decrease with the biaxial strains changing from 0.5% to 0.5% .For films of (11 ■ 2) -plane, the plates are expected to be anisotropic in the growth plane.Such anisotropic strains give rise to valence band mixing which results in dramatic change in optical polarisation property. strain can also result in optical polarisation switching phenomena. Finally, we discuss the applications of these properties to the (11 ■ 2) plane GaN-based light-emitting diode and lase diode.