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６４Ｋ位ＬＳＩ固定存储器美国光源技术股份公司正在研制周期时间短到２０ｎｓ６４Ｋ位ＬＳＩ铁电体固定存储器。该存储元件为把铁电体薄膜和半导体薄膜重叠的结构元件，由ＭＯＳ晶体管构成。半导体薄膜表面方向的电阻值由铁电体薄膜的极化方向而改变，把这个变化作为数据...
64K-bit LSI fixed memory American Light Source Technology AG is developing a short period of time to 20ns64K LSI ferroelectric fixed memory. The memory element is a MOS transistor having a structure in which a ferroelectric thin film and a semiconductor thin film are stacked. The resistance of the semiconductor film in the direction of the surface is changed by the polarization direction of the ferroelectric thin film, and this change is taken as data.