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采用等离子体增强化学气相沉积技术,以SiH_4作为硅源,NH_3和N_2共同作为氮源,在单晶硅衬底上制备了不同的氮化硅薄膜.X射线衍射分析薄膜晶体结构,通过计算晶格尺寸大小证明了纳米硅颗粒的存在.傅里叶变换红外光谱分析了薄膜中的键合作用的变化并结合化学反应过程对氮化硅薄膜中纳米硅颗粒的形成机制进行了研究,发现Si—Si键作为硅纳米颗粒的初始位置,当反应朝着生成Si—Si的方向进行时,可以促进氮化硅薄膜中硅纳米颗粒的形成.X射线衍射分析和光致发光实验结果表明Si—Si键浓度增大时,所形成的纳米硅颗粒的尺寸和浓度都随之增大.
Different SiN thin films were deposited on single crystal Si substrates by using SiH 4 as Si source and NH 3 and N 2 as nitrogen sources. The crystal structure of thin films was analyzed by X-ray diffraction (XRD) The size of the lattice proved the existence of nano-silicon particles.Fourier transform infrared spectroscopy analysis of the bonding in the film changes and combined with the chemical reaction process of silicon nitride film in the formation of nano-silicon particles were studied and found that Si -Si bond as the initial position of the silicon nanoparticles can promote the formation of silicon nanoparticles in the silicon nitride film when the reaction proceeds in the direction of generating Si-Si.X-ray diffraction analysis and photoluminescence results show that Si-Si When the bond concentration is increased, the size and concentration of the formed nano-silicon particles are increased.