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A high-sensitivity magnetic field sensor based on the nano-polysilicon thin film transistors is proposed to adopt the nano-polysilicon thin films and the nano-polysilicon/single silicon heterojunction interfaces as the sensing layers.By using CMOS technology,the fabrication of the nano-polysilicon thin film transistors with Hall probes can be achieved on the high resistivity single silicon substrates,in which the thicknesses of the nano-polysilicon thin films are 120nm and the length width ratio of the channel is 320 μm/80 μm.When VDS =5.0 V,the magnetic sensitivity and linearity is 264 m V/T and 0.23％f.s.(full scale),respectively.The experimental results show that the magnetic sensors based on nano-polysilicon thin film transistors with Hall probes exhibit high sensitivity.