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一、引言应用离子注入制造高频 GaAs 器件正在一些实验室进行。有源层固有的均匀性和重复性,通过分布修正来改善器件性能的潜力以及平面器件结构的可能性使离子注入成为一种很有吸引力的技术。本实验室利用选择区域的硅和硫注入分别形成有源层和 N~+的源和漏区的方法制备功率GaAsFET,从而实现了无台阶的平面结构。采用了由衬底生长的“合格的”半绝缘材料和掺铬的高阻缓冲层。由于使用了缓冲层,对于离子注入不怎么合格的材料也获得了与合格衬底等同的结果。
I. INTRODUCTION The manufacture of high-frequency GaAs devices using ion implantation is undergoing in some laboratories. The inherent uniformity and repeatability of the active layer, the potential to improve device performance through distribution correction, and the potential for planar device structure make ion implantation an attractive technique. In our lab, power GaAsFETs were fabricated using silicon and sulfur in select regions to form source and drain regions for the active layer and N ~ +, respectively, thereby achieving a stepless planar structure. A “qualified” semi-insulating material grown from a substrate and a high-resistance chromium-doped buffer layer are used. Due to the use of a buffer layer, equivalent results for a qualified substrate are also obtained for less than ion-implanted materials.