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在MgF_2基片上,采用电子束蒸发镀膜法制备了掺锡氧化铟(ITO)导电基底,研究了充氧及退火对ITO薄膜电阻及紫外透射比的影响。并与传统的金属导电基底Au和Cr进行了性能比较。用光学显微镜、四探针测试仪、高阻计、X射线衍射仪(XRD)和分光光度计分别测试了薄膜的表面形貌、方块电阻、形态结构和190～800 nm波段范围内薄膜的透射比曲线,得到方块电阻为10~7Ω左右时薄膜在200～400 nm波段内透射比的变化范围。实验结果表明,厚度相同时,充氧会增大ITO薄膜电阻;退火则会降低薄膜电阻并提高紫外透射比,薄膜结构由非晶态变为多晶态。方块电阻同为10~7Ω时,在200～400 nm波段充氧退火后ITO薄膜的平均透射比比Au,Cr的高10%。
On the MgF 2 substrate, an indium tin oxide (ITO) conductive substrate was prepared by electron beam evaporation and the effects of oxygenation and annealing on the resistance and UV transmittance of the ITO film were investigated. And with the traditional metal conductive substrate Au and Cr performance comparison. The surface morphology, sheet resistance, morphology and transmission of thin films in the wavelength range of 190 ~ 800 nm were measured by optical microscope, four-probe tester, high resistance meter, XRD and spectrophotometer respectively Than the curve, get the sheet resistance of about 10 ~ 7Ω film in the 200 ~ 400 nm band transmittance range. The experimental results show that, at the same thickness, the oxygen resistance increases the ITO film resistance; annealing decreases the sheet resistance and increases the UV transmittance, and the film structure changes from amorphous to polycrystalline. When the square resistance is 10 ~ 7Ω, the average transmittance of ITO thin film is 10% higher than that of Au and Cr after oxygen annealing in the wavelength range of 200-400 nm.