砷化镓数字集成电路现状及趋向

• 作 者: 陆懋权
• 机 构: 南京固体器件研究所,
• 出 处: 电子技术
• 发表日期: 1985年10期
• 关键词: 数字集成电路 砷化镓 串联电阻 绝缘特性 硅相 低场 电学性能 毫微秒 场下 载流子

虽然目前硅集成技术已开始朝着甚高速集成电路的方向前进,但它毕竟要受到其自身电学性能的限制.与硅相比,砷化镓材料具有较高的低场迁移率,在相当小的电场下即出现速度饱和;易于获得半绝缘特性的衬底,而且受激载流子的寿命短.因此,砷化镓器件中的串联电阻低;平均载流子速度高;工作电压低;

Although silicon integration technology has begun to move toward very high speed integrated circuits, it is after all limited by its own electrical performance, and gallium arsenide materials have a higher low field mobility than silicon, Of the substrate, the substrate has a semi-insulating property and the lifetime of the excited carriers is short, therefore, the series resistance in the gallium arsenide device is low, the average carrier speed is high, the operating voltage is low,