【摘 要】
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Semiconductor micro/nanostructures with broad bandgap can provide powerful candidates for fabricat-ing ultraviolet photodetectors (PDs) due to their proper bandgap,unique optoelectronic properties,large surface-to-volume ratio and good integration.However
【机 构】
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College of Science,MIIT Key Laboratory of Aerospace Information Materials and Physics,Key Laboratory
论文部分内容阅读
Semiconductor micro/nanostructures with broad bandgap can provide powerful candidates for fabricat-ing ultraviolet photodetectors (PDs) due to their proper bandgap,unique optoelectronic properties,large surface-to-volume ratio and good integration.However,semiconducting micro/nanostructures.suffer from low electron conductivity and abundant surface defects,which greatly limits their practical applica-tion in developing PDs.In this work,an ultraviolet PD consisting of single Ga-doped ZnO microwire(ZnO∶Ga MW) and p-type poly(3,4ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT∶PSS) was de-signed.When exposed to ultraviolet illumination,the PD exhibits excellent performance (responsivity～ 185 mA/W,detectivity ～ 2.4 ×1011 Jones,and fast response speed of ～ 212 μs for rise time and～ 387μs for decay time) under self-driven conditions.Compared with that of an undoped ZnO MW-based PD,the responsivity and detectivity of ZnO∶Ga MW/PEDOT∶PSS PD are significantly enhanced over 400％ and 600％,respectively.Due to the incorporation of Ga element,the charge transport properties of a ZnO∶Ga MW,specifically for the mobility,are effectively enhanced,which can substantially facili-tate the generation,separation,transport and harvest efficiency of photo-generated carriers in the as-fabricated PD.Besides,the Ga-incorporation improves the crystalline quality of MWs and reduces surface state density,further suggesting a high-quality ZnO∶Ga MW/PEDOT∶PSS heterojunction.This work pro-vides a potential approach for designing high-performance self-powered ultraviolet PDs from the aspect of enhancing carrier transport through fine doping.
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