A W-band two-stage cascode amplifier with gain of 25.7 dB

• 作 者: 钟英辉 张玉明 张义门 曹玉雄 姚鸿飞 王显泰 吕红亮 刘新宇 金智
• 机 构: School of Microelectronics,Xidian University,Institute of Microelectronics,Chinese Academy of Scienc
• 出 处: Journal of Semiconductors
• 发表日期: 2013年12期
• 关键词: amplifier waveguide transistor capacitor topology thereby blocks matching drain

A W-band two-stage amplifier MMIC has been developed using a fully passivated 2 20 m gate-width and 0.15 m gate-length InP-based high electron mobility transistor(HEMT) technology.The two-stage amplifier has been realized in combination with a coplanar waveguide technique and cascode topology,thus leading to a compact chip-size of 1.85 0.932 mm2 and an excellent small-signal gain of 25.7 dB at 106 GHz.Additionally,an inter-digital coupling capacitor blocks low-frequency signal,thereby enhancing the stability of the amplifier.The successful design of the two-stage amplifier MMIC indicates that InP HEMT technology has a great potential for W-band applications.

A W-band two-stage amplifier MMIC has been developed using a fully passivated 2 20 m gate-width and 0.15 m gate-length InP-based high electron mobility transistor (HEMT) technology. The two-stage amplifier has been realized in combination with a coplanar waveguide technique and cascode topology, thus leading to a compact chip-size of 1.85 0.932 mm2 and an excellent small-signal gain of 25.7 dB at 106 GHz. Additionally, an inter-digital coupling capacitor blocks low-frequency signal, thereby enhancing the stability of the amplifier. The successful design of the two-stage amplifier MMIC indicates that InP HEMT technology has a great potential for W-band applications.