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我们在硅锗合金衬底上采用氧化等制膜方式生成零维和三维的纳米结构样品,用高精度椭偏仪(HPE)、卢瑟福背散射谱仪(RBS)和高分辨率扫描透射电子显微镜(HR-STEM)测量样品的纳米结构,并采用美国威思康新州立大学开发的Rump模拟软件对卢瑟福背散射谱(RBS)中的CHANNEL谱和RANDOM谱分别进行精细结构模拟,计算且测量出纳米氧化层与锗的纳米薄膜结构分布,并且反馈控制加工过程,优化硅锗半导体材料纳米结构样品的加工条件。我们在硅锗合金的氧化层表面中首次发现纳米锗量子点和量子层结构,我们首次提出的生成硅锗纳米结构的优化加工条件的氧化时间和氧化温度的匹配公式和理论模型与实验结果拟合得很好。
We fabricated nanostructured samples of zero- and three-dimensional nanostructures on silicon-germanium (SiGe) substrates by oxidation and other methods. High-precision ellipsometry (HPE), Rutherford backscatter spectroscopy (RBS) and high resolution scanning transmission electron The microstructure of the samples was measured by HR-STEM. The RANN simulation software was used to simulate the structure of RANNOM spectrum and RANNOM spectrum in Rutherford backscattering spectrum (RBS) The structure of nanostructured films of nanostructured oxide and germanium was measured, and the processing of nanostructured nanostructured samples of silicon germanium was optimized by feedback control of the fabrication process. We first found the germanium nano-quantum dots and the quantum-layer structure in the oxide layer of SiGe alloy. The matching formula and theoretical model of the oxidation time and the oxidation temperature for the optimized processing conditions of the SiGe-based nanostructures Well together.