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用 Sol- Gel方法研制了 PL T[(Pb0 .83 L a0 .17) Ti O3 ]铁电薄膜 ,结合非挥发性铁电存储器对铁电电容的要求 ,研究了 Au/ PL T/ Pt铁电电容和漏电流、剩余极化、疲劳、开关特性和揭电常数等性能。对厚度为 0 .4 μm的薄膜 ,5 V时的剩余极化强度 Pr=2 2 μC/ cm2 ,矫顽场强度 Ec=6 0k V/ cm,相对介电常数约 130 0 ,漏电流 Id=3.2× 10 -8A/ mm2 ,开关特性优良。疲劳测试表明 ,对Vpp=10 V的锯齿信号 ,经 4 .5× 10 11周期后 ,剩余极化强度衰减 2 0 %。上述性能表明 ,该 PL T膜能用于非挥发性铁电存储器的试制
PLT [(Pb0.83La0.17) TiO3] ferroelectric thin films were prepared by sol-gel method. Combining the requirements of ferroelectric capacitors for nonvolatile ferroelectric memory, the effects of Au / PLT / Pt ferroelectric Capacitance and leakage current, residual polarization, fatigue, switching characteristics and Jie Dai constant performance. The residual polarization of Pr = 2 2 μC / cm2 at 5 V, the coercive field strength Ec = 60 kV / cm, the relative dielectric constant of 130 0, the leakage current Id = 3.2 × 10 -8A / mm2, excellent switching characteristics. Fatigue tests show that for the sawtooth signal with Vpp = 10 V, the residual polarization decreases 20% after 4.5 × 10 11 cycles. The above properties show that the PL T film can be used for non-volatile ferroelectric memory trial