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采用射频磁控溅射技术在玻璃衬底上制备钛镓合掺氧化锌(TGZO)半导体薄膜,通过XRD、XPS、四探针和透射光谱等方法测试表征,研究了衬底温度对薄膜微观结构、晶粒生长和光电综合性能的影响。结果表明:TGZO薄膜具有高度的c轴择优取向生长特性,其微观结构和光电性能与衬底温度密切相关。当衬底温度为340℃时,TGZO薄膜具有最大的织构系数(2.963)、最大的晶粒尺寸(85.7nm)、最小的微应变(0.231)、最低的电阻率(1.87×10-3Ω·cm)、最高的可见光区平均透射率(84.8%)和最大的品质因数(451.2Ω-1·cm-1)。其晶体质量和光电综合性能最佳。
The films of titanium gallium-doped zinc oxide (TGZO) were prepared by radio-frequency magnetron sputtering on glass substrate and characterized by XRD, XPS, four-probe and transmission spectroscopy. The effects of substrate temperature on the microstructure, , The effects of grain growth and optoelectronic performance. The results show that the TGZO film has a high c-axis preferred orientation growth characteristics, and its microstructure and photoelectric properties are closely related to the substrate temperature. When the substrate temperature is 340 ℃, the TGZO film has the largest texture coefficient (2.963), the largest grain size (85.7nm), the smallest strain (0.231) and the lowest resistivity (1.87 × 10-3Ω · cm), the highest average transmittance in the visible region (84.8%) and the largest figure of merit (451.2Ω-1 · cm-1). Its crystal quality and optoelectronic performance of the best.