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用磁控溅射方法制备了ＶＯ２热致变色薄膜．用Ｘ射线衍射、Ｘ射线光电子谱和原子力显微镜对薄膜的宏观及微观结构进行了分析，表明ＶＯ２薄膜纯度高、相结构单一、结晶度好．薄膜的光透过率在２０００ｎｍ处相变前后改变了４２％，高／低温电阻率变化达到三个数量级以上．薄膜的光透过谱和相变过程中电学性质变化的研究与结构分析结果相一致．
VO2 thermochromic thin films were prepared by magnetron sputtering. The macroscopic and microstructure of the films were analyzed by X-ray diffraction, X-ray photoelectron spectroscopy and atomic force microscopy. The results show that the VO2 films have high purity, single phase structure and good crystallinity. The light transmittance of the film changes by 42% before and after the phase change at 2000 nm, and the high / low temperature resistivity changes by more than three orders of magnitude. The light transmission spectra of thin films and the change of electrical properties during phase transition are consistent with the results of structural analysis.