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本文主要分析了砷化镓肖特基势垒栅微波场效应晶体管的直流特性。分析表明,在低电压区基本符合肖克莱缓变沟道理论,但当电压增加到沟道内的载流子达到饱和漂移速度时,源-漏间的直流特性不能再用肖克莱的缓变沟道理论,必须进行二维分析。由于砷化镓的速度-电场特性具有(刀贝)的斜率,其源-漏间的直流特性要出现微分(刀贝)阻,通过对实际砷化镓肖特基势垒栅微波场效应晶体管的测量,观察了这一微分(刀贝)阻,并为测量 S_(22)大于1所证实。当漏电压进一步提高时,会出现栅流随漏电压的增加而增加,这一现象可用来研究碰撞电离,且具有较高的灵敏度。
This paper mainly analyzes the DC characteristics of gallium arsenide Schottky barrier microwave field-effect transistors. The analysis shows that in the low voltage region, the Schockler slow channel theory is basically in line with that of the Schockler delay channel. However, when the voltage increases to reach the saturation drift speed of the carrier in the channel, Change the channel theory, we must conduct a two-dimensional analysis. Since gallium arsenide has a speed-electric field characteristic with a slope of (scalloped), the DC characteristic of the source-drain is differentiated (scalpel) resistance, and the actual gallium arsenide Schottky barrier microwave field-effect transistor The differential (scalpel) resistance was observed and was confirmed for measurements S_ (22)> 1. When the drain voltage is further increased, it appears that the gate current increases with the increase of the drain voltage. This phenomenon can be used to study the impact ionization with high sensitivity.