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据日本《于L/亡汐,>学会志》1992年第10期报道,日本新技术事业团在GaAs衬底上已成功制成称作量子点、大小为100nm以下的超微细晶粒。量子点把电子控制在超微细空间中时,是利用量子效应器件的基本结构,有可能成为超高速光开关和高效激光器。 所发展的技术是在GaAs衬底上,利用CVD法把InP生长成岛状,形成边宽75nm,高25nm锥形的点,把这种InP岛状晶体埋到InGaP中,照射Ar激光,在室温下可观察到波长约800nm的强发光。因发光波长移动到短波侧,这样,岛状晶体可产生量子效应。进一步控制岛状晶体的排列,并制成均匀的结构,可望实现实用化的量子点器件。
According to Japan’s “L / death Xi,”> "Association of Shui, 1992 No. 10 reported that Japan’s new technology group on the GaAs substrate has been successfully made known as quantum dots, the size of ultra-fine grains below 100nm. Quantum dot electronically controlled in the ultra-fine space, is the use of quantum-effect device of the basic structure, it may become ultra-high speed optical switch and high-efficiency laser. The developed technique is to grow an InP on a GaAs substrate by using a CVD method to form an island of 75 nm in width and 25 nm in height at a conical point. This InP island-shaped crystal is buried in InGaP, irradiated with an Ar laser, Strong luminescence with a wavelength of about 800 nm can be observed at room temperature. Due to the shift of the emission wavelength to the short-wave side, the island-shaped crystal can have a quantum effect. Further control of the island crystal arrangement, and made uniform structure, is expected to achieve practical quantum dot devices.