Influence of sputtering pressure on optical constants of a-GaAs_(1-x)N_x thin films

• 作 者: 贾宝山 王云华 周路 白端元 乔忠良 高欣 薄报学
• 机 构: State Key Laboratory on High Power Semiconductor Lasers,Changchun University of Science and Technolo
• 出 处: 半导体学报
• 发表日期: 2012年08期
• 关键词: sputtering magnetron constants fitted transmittance refractive attractive fabric

Amorphous GaAs_(1-x)N_x(a-GaAs_(1-x)N_x) thin films have been deposited at room temperature by a reactive magnetron sputtering technique on glass substrates with different sputtering pressures.The thickness,nitrogen content,carrier concentration and transmittance of the as-deposited films were determined experimentally.The influence of sputtering pressure on the optical band gap,refractive index and dispersion parameters(E_o,E_d) has been investigated.An analysis of the absorption coefficient revealed a direct optical transition characterizing the asdeposited films.The refractive index dispersions of the as-deposited a-GaAs_(1-x)N_x films fitted well to the Cauchy dispersion relation and the Wemple model.

Amorphous GaAs_ (1-x) N_x (a-GaAs_ (1-x) N_x) thin films have been deposited at room temperature by a reactive magnetron sputtering technique on glass substrates with different sputtering strengths. Nitrogen content, carrier concentration and transmittance of the as-deposited films were determined experimentally. The influence of sputtering pressure on the optical band gap, refractive index and dispersion parameters (E_o, E_d) has been investigated. An analysis of the absorption coefficient revealed a direct optical transition characterizing the asdeposited films. The refractive index of dispersions of the as-deposited a-GaAs_ (1-x) N_x films fitted well to the Cauchy dispersion relation and the Wemple model.