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一、用真空蒸发生长高迁移率的Pb_0.8Sn_o.2Te外延薄膜窄禁带半导体Ⅳ-Ⅵ族化合物的外延层,制作光伏红外探测器,已在光电子学方面得到广泛的应用。这些半导体材料的三元化合物(如Pb_χSn_1-χTe,Pb_χSn_1-χSe),具有特别的优点,即禁带宽度是随组分而变的。这些性质已被广泛用于研制红外探测器和红外激光器二极管。Pb_χSn_1-χTe之所以能受到大量注意是因为它能用来制备高性能的红外探测器,工作于77K和77K以上,敏感于8～14μm大气窗口的红外光谱区域。对探测器应用特别感兴
First, using vacuum epitaxial growth of high mobility Pb_0.8Sn_o.2Te epitaxial thin-film semiconductor layer IV-Ⅵ compound, the production of photovoltaic infrared detector, has been widely used in optoelectronics. Ternary compounds (such as Pb_xSn_1 -χTe, Pb_xSn_1 -χSe) of these semiconductor materials have the particular advantage that the forbidden band width varies with the composition. These properties have been widely used to develop infrared detectors and infrared laser diodes. The reason why Pb_xSn_1-χTe can get a lot of attention because it can be used to prepare high-performance infrared detectors, working at 77K and 77K above, sensitive to 8 ~ 14μm atmospheric window infrared spectral region. Special interest in detector applications