飞秒激光与准分子激光制作碲掺杂硅探测器

• 作 者: 王熙元 黄永光 刘德伟 朱小宁 王宝军 朱洪亮
• 机 构: 中国科学院半导体研究所半导体材料科学重点实验室,
• 出 处: 中国激光
• 发表日期: 2013年03期
• 关键词: 飞秒激光 硅探测器 准分子激光 反向偏压 外量子效率 碲掺杂 截止波长 硅衬底 超短脉冲激光 硅单晶

采用飞秒激光扫描P型单晶硅衬底上的碲单质膜层,实现了碲元素在硅中的N型掺杂,随后利用准分子激光对掺杂样品进行退火处理,制备了碲掺杂硅单晶材料。利用该材料研制出了在室温下具有高响应的碲掺杂硅探测器。在-4V的反向偏压下,光电响应在1000nm处达到0.86A/W,外量子效率大于106.6%;随着反向偏压的增加,光电响应增加,同时截止波长向红外方向拓展,在-8V偏压下,截止波长达到了1235nm;在-16V偏压下,测得响应在1080nm处最高达到3.27A/W。

Using the femtosecond laser scanning of the p-type single-crystal silicon on the substrate of tellurium simplex film, to achieve the tellurium element in silicon N-type doping, followed by excimer laser doping samples annealed prepared tellurium doping Silicon single crystal material. Using this material, a tellurium-doped silicon detector with high response at room temperature was developed. The photoelectric response reaches 0.86 A / W at 1000 nm and the external quantum efficiency is more than 106.6% under the reverse bias voltage of -4V. With the increase of reverse bias, the photoelectric response increases and the cutoff wavelength expands to the infrared direction. At -8 V bias, the cutoff wavelength reaches 1235 nm; at -16 V bias, the measured response reaches up to 3.27 A / W at 1080 nm.