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采用脉冲磁控反应溅射工艺进行氧化铝薄膜的沉积实验 ,对该工艺过程中溅射电压和沉积速率与氧流量的“迟滞回线”现象进行了研究。通过给出靶面刻蚀区氧化层厚度与氧分压之间的关系 ,解释了薄膜沉积速率变化的原因。
The deposition experiment of alumina thin film was carried out by pulsed magnetron reactive sputtering process, and the phenomenon of “hysteresis loop” of sputtering voltage, deposition rate and oxygen flow rate in the process was studied. The reason of the change of the film deposition rate is explained by the relationship between the oxide thickness and the oxygen partial pressure in the etching area of the target.