【摘 要】
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AlGaN-based ultraviolet light-emitting diodes (UV-LEDs) have attracted considerable interest due to their wide range of application fields. However, they are st
【机 构】
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Guangdong Engineering Research Center of Optoelectronic Functional Materials and Devices, South Chin
论文部分内容阅读
AlGaN-based ultraviolet light-emitting diodes (UV-LEDs) have attracted considerable interest due to their wide range of application fields. However, they are still suffering from low light out power and unsatisfactory quantum efficiency. The utilization of polarization-doped technique by grading the Al content in p-type layer has demonstrated its effectiveness in improving LED performances by providing sufficiently high hole concentration. However, too large degree of grading through monotonously increasing the Al content causes strains in active regions, which constrains application of this tech-nique, especially for short wavelength UV-LEDs. To further improve 340-nm UV-LED performances, segmentally graded Al content p-AlxGa1?xN has been proposed and investigated in this work. Numerical results show that the inteal quantum efficiency and output power of proposed structures are improved due to the enhanced carrier concentrations and radiative recombination rate in multiple quantum wells, compared to those of the conventional UV-LED with a stationary Al content AlGaN electron blocking layer. Moreover, by adopting the segmentally graded p-AlxGa1?xN, band bending within the last quantum barrier/p-type layer interface is effectively eliminated.
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