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按质量比92:2将ZnO和Al2O3粉末采用热压方法制备AZO溅射靶材。研究温度、压力、保温和保压时间等热压工艺条件对靶材相对密度的影响,研究致密化过程中的气孔演化和相结构变化。结果表明:采用分段热压方式,即在压力35MPa下,在温度1050℃和1150℃分别保温保压1h,所制备的AZO靶材具有最大的相对密度99%。在温度为1050℃时,靶材中的闭合气孔率最低;当热压温度低于900℃时,靶材中存在Al2O3相;当温度升高到1000℃以后,Al2O3相消失,但有ZnAl2O4相生成,且ZnAl2O4相随着温度的升高而增加。与无压烧结比较,热压烧结具有烧结温度低、ZnAl2O4相含量低的优点。靶材电阻率随着热压温度的升高和保温、保压时间的延长而降低。在热压温度1100℃、压力35MPa、保温和保压时间10h下制备了电阻率低达3×10-3-Ω·cm的AZO靶材。
AZO sputtering targets were prepared by hot pressing ZnO and Al2O3 powders at mass ratio of 92: 2. The effects of hot pressing conditions such as temperature, pressure, holding time and dwell time on the relative density of targets were studied. The stomatal evolution and phase structure changes during densification were studied. The results show that the AZO target prepared by segmented hot pressing, that is, under the pressure of 35MPa, holding and holding for 1h at 1050 ℃ and 1150 ℃ respectively, has the maximum relative density of 99%. When the temperature is 1050 ℃, the closed porosity of the target is the lowest. When the hot pressing temperature is lower than 900 ℃, the Al2O3 phase exists in the target. When the temperature is up to 1000 ℃, the Al2O3 phase disappears, but the ZnAl2O4 phase Generated, and the ZnAl2O4 phase increases with increasing temperature. Compared with pressureless sintering, hot pressing sintering has the advantages of low sintering temperature and low content of ZnAl2O4 phase. The target resistivity decreases with the increase of hot pressing temperature and the holding time and holding time. The AZO targets with resistivity as low as 3 × 10-3-Ω · cm were prepared by hot pressing at 1100 ℃, pressure of 35MPa and holding time and holding time at 10h.