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针对物联网IoT的小面积低噪声的需求,相对传统共源共栅结构的低噪声放大器,提出了一种新型低噪声放大器。核心电路没有采用传统的源级电感负反馈的共源共栅结构,通过去除片上电感的方法,节省了77%的芯片面积。芯片采用IBM 0.18μm SiGe BiCMOS工艺设计制造。测试表明,电源电压在2.5 V情况下,在2.4 GHz处能够提供20dB的前向增益,噪声系数为1.8dB,输入和输出匹配都小于-16dB,1dB压缩点为-15dBm,消耗电流为3.6mA,而芯片面积仅为0.45mm×0.5mm。
Aiming at the demand of IoT with small area and low noise, a new type of low noise amplifier is proposed compared with the traditional low noise amplifier with cascode structure. The core circuit does not use a conventional cascode structure with negative feedback of the source inductor, saving 77% of the chip area by removing the on-chip inductor. Chip using IBM 0.18μm SiGe BiCMOS process design and manufacturing. The test shows that the supply voltage can provide 20dB forward gain at 2.4GHz at 2.5V, the noise figure is 1.8dB, the input-output matching is less than -16dB, the 1dB compression point is -15dBm and the consumption current is 3.6mA , While the chip area is only 0.45mm × 0.5mm.