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The ion beam mixing prepared SiC films on stainless steel substrates were irradiated by hydrogen ion beam with an energy of 5 keV to a dose of 1×1018 ions/cm2. AES and XPS were used for the characterization of chemical bonding states of C and Si elements in SiC films as well as contamination oxygen before and after hydrogen ion irradiation in order to study the effect of hydrogen ion irradiation on SiC films and to understand oxygen behaviors in the SiC films prepared with ion beam mixing. The results show that contamination oxygen can react with silicon to form silicon oxides,and more oxygen entered into the films during hydrogen ion irradiation.In addition, oxygen also reacts with carbon related hydrogen to form species including carbon,hydrogen and oxygen.