论文部分内容阅读
本文介绍了为开发大面积非晶碳化硅发光器件而研制的等离子体辉光放电淀积装置及非晶碳化硅薄膜的淀积方法,以及利用透射光谱同时测量薄膜厚度与光学常数的方法,并对生长薄膜的光学性质利用吸收光谱和场致发光谱进行了讨论。
This paper presents a deposition method of plasma glow discharge deposition apparatus and amorphous silicon carbide film developed for the development of a large area of amorphous silicon carbide light emitting device and a method of simultaneous measurement of film thickness and optical constant by using transmission spectrum. The optical properties of growing films are discussed using absorption and electroluminescence spectra.