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利用半导体化合物制作气敏元件,近年来研究得较为活跃。但是多数是基于半导体气敏材料在与气体接触时,伴随表面吸附或化学反应,导致其电性能特别是电阻特性的变化来检测气体浓度。本人研究了一种新型的半导体气敏元件,利用半导体器件的电容特性的改变,用于检测目前较难检测的CO_2气体的浓度,并获得了具备一定电容变化的敏感性半导体材料。用机械掺杂方法制备、两种不同导电类型的纳米级的半导体粉末BaTiO_3与CuO,两者经压制、烧结后,涂覆导电银浆,引出Pt线,制成半导体电容器件。考察该器件在一定温度,测试交流频率下对低浓度CO_2气体的灵敏性,结果表明.其电容大小随CO_2浓度变化
The use of semiconductor compounds for the production of gas sensors has been more active in recent years. However, the majority is based on the detection of gas concentrations by semiconductor gas-sensitive materials upon contact with gas, accompanied by surface adsorption or chemical reactions leading to changes in their electrical properties, especially their electrical resistance properties. A new type of semiconductor gas sensor has been researched in this paper. The change of the capacitance characteristics of the semiconductor device is used to detect the concentration of CO 2 gas which is difficult to detect at present, and a sensitive semiconductor material with a certain capacitance change is obtained. Two kinds of nano-scale semiconductor powders BaTiO 3 and CuO with different conductivity types were prepared by mechanical doping method. Both of them were pressed and sintered, and then coated with conductive silver paste to lead Pt wire to form a semiconductor capacitor device. The sensitivity of the device to low concentration CO 2 gas at a certain temperature and test AC frequency was investigated. The results showed that the capacitance of the device varied with the CO 2 concentration