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采用双重吸杂硅片作为衬底材料,应用于CCD器件的研制工作已获得良好的效果。它使器件的暗电流明显下降,基本上消除了暗电流尖峰,同时也使器件的其它性能得到改善。目前,双吸除技术已作为一种常规工艺应用于CCD器件的制作。
Double-suction silicon as the substrate material used in the development of CCD devices have been achieved good results. It significantly reduces the dark current of the device, virtually eliminating dark current spikes and improving other device performance. At present, double suction removal technology has been used as a conventional process in the manufacture of CCD devices.