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本文用EHT方法计算a-SiC和a-SiC:H体系的电子态.得到的结果表明,由悬挂键引起的禁带中的电子态可因氢原子饱和而消失,与实验结果相符.
In this paper, the electronic states of a-SiC and a-SiC: H system are calculated by EHT method, and the results show that the electronic states in the forbidden band caused by dangling bonds disappear due to the saturation of hydrogen atoms, which agrees well with the experimental results.