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用磁控溅射方法在Si衬底上制备了A1掺杂Mg_2Si薄膜,通过X射线衍射仪(XRD)、扫描电镜(SEM)、原子力显微镜(AFM)和分光光度计研究了掺杂含量对Mg2Si薄膜组分、表面形貌、粗糙度及光学带隙值的影响。XRD结果表明随着A1掺杂量的增加,Mg2Si衍射峰先增强后减弱。SEM及AFM的结果表明随掺杂量的增加,结晶度先增加后降低,晶粒尺寸减小,粗糙度先增加后降低.得到掺杂后薄膜间接跃迁带隙范围为0.423~0.495 eV,直接跃迁带隙范围为0.72~0.748 eV,掺杂前薄膜间接跃迁带隙和直接跃迁带隙分别为0.53 eV、0.833 eV.
Al-doped Mg 2 Si thin films were prepared on Si substrates by magnetron sputtering. The effects of doping content on the dielectric properties of Mg 2 Si films were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) and spectrophotometer Film composition, surface morphology, roughness and optical band gap value. XRD results show that with the increase of Al doping amount, the diffraction peak of Mg2Si first increases and then decreases. The results of SEM and AFM show that the crystallinity first increases and then decreases, the grain size decreases and the roughness increases first and then decreases with the increase of doping amount.The indirect bandgap of the films after doping is in the range of 0.423-0.495 eV, The transition bandgap ranged from 0.72 to 0.748 eV. The indirect bandgap and direct bandgap of the films before doping were 0.53 eV and 0.833 eV, respectively.