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通过制备栅内不同掺杂条件的Ni全硅化金属栅电容并分析其C-V和Vfb-EOT特性发现,Ga和Yb较常规的杂质而言具有更好的栅功函数调节能力,能够分别将Ni全硅化金属栅电极功函数调节到价带顶和导带底附近,满足高性能体硅平面互补金属氧化物半导体(CMOS)器件对栅电极功函数的要求.同时根据电偶极子(Dipole)理论分析了Ga和Yb具有较强栅功函数调节能力的原因.另外,研究发现栅内掺入Ga或Yb杂质后的Ni全硅化金属栅电容的电容值变大、栅极泄漏电流反而变小,通过对C-V和栅极泄漏电流特性进行分析,对这一现象进行了解释.
By fabricating Ni-fully-silicided metal gate capacitors with different doping conditions in the gate and analyzing their CV and Vfb-EOT characteristics, it is found that Ga and Yb have better gate work function regulation ability than conventional impurities and can respectively separate Ni The work function of the metal silicide gate electrode is adjusted to the top of the valence band and the bottom of the conduction band so as to meet the work function requirement of the gate electrode of the high performance bulk silicon planar CMOS device. According to the theory of dipole The reason why Ga and Yb have strong gate work function adjustment ability is also analyzed.It is also found that the capacitance of Ni all-metal silicide gate with Ga or Yb impurity in the gate becomes larger and the gate leakage current decreases instead, This phenomenon is explained by analyzing the CV and gate leakage current characteristics.