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采用射频反应磁控溅射法用高纯石墨作靶、三氟甲烷 (CHF3)和氩气 (Ar)作源气体制备了氟化类金刚石 (F DLC)薄膜 ,通过XPS光谱结合拉曼光谱、红外透射光谱和紫外 可见光光谱研究了源气体流量比等工艺条件对薄膜中键结构、sp2 sp3杂化比以及光学带隙等性能的影响 .结果表明在低功率 (6 0W)、高气压 (2 0Pa)和适当的流量比(Ar CHF3=2∶1 )下利用射频反应磁控溅射法可制备出氟含量高且具有较宽光学带隙和超低介电常数的F DLC薄膜
Fluorinated diamond (F DLC) films were prepared by radio frequency reactive magnetron sputtering with high purity graphite as target and trifluoromethane (CHF3) and argon (Ar) as source gases. By XPS and Raman spectroscopy, Infrared transmission spectrum and UV-Vis spectrum were used to study the effects of process parameters such as source gas flow ratio on the bonding structure, sp2 sp3 hybrid ratio and optical band gap in the films. The results show that under low power (60 W), high pressure (2) 0Pa) and the appropriate flow rate (Ar CHF3 = 2: 1) using RF reactive magnetron sputtering method can be prepared F DLC film with a high fluorine content and has a wide optical band gap and ultra-low dielectric constant