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低压气相生长金刚石是在石墨处于稳态而金刚石处于亚稳态条件下进行的。利用原子H对石墨的腐刻速率比对金刚石要大两个数量级,在生长室中加入过饱和的原子氢,造成有利于金刚石生长而抑制石墨生长的动力学优势。对于金刚石生长机制的研究,目前已基本确定CH_3/CH_4和C_2H_2是金刚石主要的前驱生长基团,但对于它们对金刚石(111)和(100)面的贡献还没有取得统一的认识。迄今对于亚稳态条件下金刚石(111)和(100)面的生长模型提了很多,主要有Harris等的CH_3基团生长(111)和(100)面模型;Frenklach等的C_2H_2生
Low-pressure vapor growth diamond is in the steady state of graphite and diamond in metastable conditions. The rate of decay of graphite by atomic H is two orders of magnitude larger than that of diamond, and supersaturated atomic hydrogen is added to the growth chamber, resulting in a kinetic advantage that is favorable to the growth of diamond while inhibiting the growth of graphite. For the study of diamond growth mechanism, CH_3 / CH_4 and C_2H_2 have been basically identified as the major precursor growth groups for diamonds. However, their contribution to the (111) and (100) planes has not been uniformly recognized. So far, there are many growth models for the (111) and (100) planes of diamond under metastable conditions, including the (111) and (100) plane models of CH_3 group growth by Harris et al.