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GaN thin films grown on sapphire substrates by metalorganic chemical vapor deposition (MOCVD) are successfully bonded and transferred onto Si receptor substrates using fusion bonding and laser lift-off (LLO) technique. GaN/Al_2O_3 structures are joined to Si substrates by pressure bonding Ti/Au coated GaN surface onto Ti/Au coated Si receptor substrates at the temperature of 400℃. KrF excimer laser with 400-mJ/cm~2 energy density, 248-nm wavelength, and 30-ns pulse width is used to irradiate the wafer through the transparent sapphire substrates and separate GaN films from sapphire. Cross-section scanning electron microscopy (SEM) combined with energy dispersive X-ray spectrometer (EDS) measurements show that Au/Si solid solution is formed during bonding process. Atomic force microscopy (AFM) and photoluminescence (PL) measurements show that the qualities of GaN films on Si substrates degrade little after substrates transfer.
GaN thin films grown on sapphire substrates by metalorganic chemical vapor deposition (MOCVD) are successfully bonded and transferred onto Si receptor substrates using fusion bonding and laser lift-off (LLO) technique. GaN / Al 2 O 3 structures are joined to Si substrates by pressure bonding Ti / Au coated Si receptor substrates at the temperature of 400 ° C. KrF excimer laser with 400-mJ / cm ~ 2 energy density, 248-nm wavelength, and 30-ns pulse width is used to irradiate the Cross-section scanning electron microscopy (SEM) combined with energy dispersive X-ray spectrometer (EDS) measurements show that Au / Si solid solution is formed during bonding process. Atomic force microscopy (AFM) and photoluminescence (PL) measurements show that the qualities of GaN films on Si substrates degrade little after substrates transfer.