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用选择腐蚀多晶硅下面的氧化层的方法能制备出多晶硅微细加工的结构。该微细加工技术的优点在于其简单性和与常规集成电路的兼容性。由于多晶硅内部的压应力,使微结构的尺寸受到了限制,但通过退火可使内部压力减少。本文描述了将一个谐振多晶硅微桥和NMOS单片电路结合在一起的集成蒸汽传感器的制作方法。频率响应测量表明,多晶硅的杨氏模量为4×10~(10)Nm~(-2),其值明显地低于单晶硅。多晶硅微机械加工的一个可能应用是制造集成压力传感器,多晶硅压力传感器的研究有助于确定进一步研究的内容。
The polycrystalline silicon micro-machined structure can be prepared by a method of selectively etching the underlying oxide layer of the polycrystalline silicon. The advantage of this microfabrication technique is its simplicity and its compatibility with conventional integrated circuits. Due to the compressive stress inside the polycrystalline silicon, the size of the microstructure is limited, but the internal pressure can be reduced by annealing. This article describes a method of making an integrated steam sensor that combines a resonant polysilicon micro-bridge with an NMOS monolithic circuit. The frequency response measurements show that the Young’s modulus of polycrystalline silicon is 4 × 10 ~ (10) Nm ~ (-2), its value is obviously lower than monocrystalline silicon. One possible application of polysilicon micromachining is to manufacture an integrated pressure sensor. Research on polysilicon pressure sensors can help determine the content of further research.