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比较了注F后900℃ N_2退火30分钟和950℃ N_2退火10分钟两种退火方式制作的P沟MOSFET和N沟MOSFET的电离辐照行为。结果发现,注F后900℃ N_2退火30分钟具有较强的抑制辐射感生氧化物电荷和界面态增长的能力。用退火工艺影响栅介质中缺陷的消除模型对实验结果进行了讨论。
The ionizing radiation behavior of P-channel MOSFET and N-channel MOSFET fabricated by annealing at 900 ℃ for 30 minutes and 950 ℃ for N_2 annealing for 10 minutes was compared. The results showed that annealing of N 2 at 900 ℃ for 30 min after F injection has strong ability of suppressing the charge-induced charge and interface state growth. The experimental results are discussed by using the annealing process to eliminate the defects in the gate dielectric.