论文部分内容阅读
本专利涉及一种锑化铟红外探测器,它能有效地工作在一个很宽的温度范围内,并能在比现有器件工作温度高的温度下工作。早先的锑化铟红外探测器是用n-型材料和一浅扩散P-型层的含受主材料镉或锌的薄片所制成。这种探测器通常工作在77°K;同时采用一种杂质n-型材料,其自由电子数(杂质浓度)约为0.8～3.1×10~(15)/厘米~3。如果,增加杂质浓度到10以上,则可提高探测器的灵敏度,而且探测器还可在较高的温度
This patent relates to an indium antimonide infrared detector that operates efficiently over a wide range of temperatures and at temperatures higher than the operating temperatures of existing devices. Earlier antimonide indium detectors were made of n-type material and a shallow diffused p-type layer containing an acceptor material, cadmium or zinc. The detector typically operates at 77 ° K; with an impurity n-type material, the number of free electrons (impurity concentration) is about 0.8 to 3.1 × 10-15 / cm3. If you increase the impurity concentration to 10 or more, you can increase the sensitivity of the detector, and the detector can also be at a higher temperature