Atomic layer deposition of an Al_2O_3 dielectric on ultrathin graphite by using electron beam irradi

• 作 者: 蒋然 孟令国 张锡健 Hyung-Suk Jung Cheol Seong Hwang
• 机 构: School of Physics,Shandong University,Jinan 250100,China,Department of Materials Science and Enginee
• 出 处: 半导体学报
• 发表日期: 2012年09期
• 关键词: graphite irradiation dielectric Atomic attributed Electron amorphous sequential

Atomic layer deposition of an Al_2O_3 dielectric on ultrathin graphite is studied in order to investigate the integration of a high k dielectric with graphite-based substrates.Electron beam irradiation on the graphite surface is followed by a standard atomic layer deposition of Al_2O_3.Improvement of the Al_2O_3 layer deposition morphology was observed when using this radiation exposure on graphite.This result may be attributed to the amorphous change of the graphite layers during electron beam irradiation.

Atomic layer deposition of an A1_2O_3 dielectric on ultrathin graphite is studied in order to investigate the integration of a high k dielectric with graphite-based substrates.Electron beam irradiation on the graphite surface is followed by a standard atomic layer deposition of Al_2O_3.Improvement of the Al 2 O 3 layer deposition morphology was observed when using this radiation exposure on graphite. This result may be attributed to the amorphous change of the graphite layers during electron beam irradiation.