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对电阻率为 103~6 Ω.cm 的 In 掺杂 Cd0.9Zn0.1Te 晶片在 Te 气氛和 Cd/Zn 平衡蒸汽压下进行了热处理,对电阻率为 108~9 Ω.cm的非掺杂晶片则在 In 气氛和 Cd/Zn 平衡蒸汽压下进行了热处理。结果表明,In 掺杂 Cd0.9Zn0.1Te 晶片经处理后电阻率可提高 3 个数量级。非掺杂晶片在 In 气氛中热处理可很容易地改变导电类型,在热处理温度 700℃,In 分压 6.1×10-4 Pa,退火时间达 48 h 后,电阻率可以提高到 2.6×109 Ω.cm。
The In-doped Cd0.9Zn0.1Te wafers with resistivity of 103 ~ 6 Ω.cm were heat-treated in the Te atmosphere and the equilibrium vapor pressure of Cd / Zn, and the un-doped wafers with the resistivity of 108 ~ 9 Ω · cm The heat treatment is carried out under an In atmosphere and a balanced vapor pressure of Cd / Zn. The results show that the resistivity of In0-doped Cd0.9Zn0.1Te wafers can be increased by 3 orders of magnitude after being treated. The conductivity of the undoped wafers can be easily changed by heat treatment in an In atmosphere. The resistivity can be increased to 2.6 × 109 Ω at a heat treatment temperature of 700 ℃, an In partial pressure of 6.1 × 10-4 Pa, and an annealing time of 48 h. cm.