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遵照伟大领袖毛主席关于“洋为中用”的教导,最近我们搜集了一些国外发表的有关1.06微米波长用的红外探测器的资料。现就几种具有代表性的器件的主要性能等问题作一简单介绍,以供参考。近十年来,激光技术的发展对快速、灵敏的光电器件,尤其是对探测1.06微米的辐射,即对探测掺钕激光的辐射提出了许多要求,如量子效率高、响应时间快、噪声低、面积较大及工作电压较低等。现扼要叙述一下可供1.06微米用的光电倍增管、光电二极管、雪崩光电二极管及磷砷铟光电器件等。
In line with Chairman Mao's great leader's guide on “Learning from Foreign Matter,” we recently collected information published abroad about infrared detectors for 1.06 micron wavelength. Now on several representative of the main performance of the device and other issues for a brief introduction for reference. In the last decade, the development of laser technology has put forward many requirements for fast and sensitive optoelectronic devices, especially the detection of 1.06 micron radiation, that is, the detection of neodymium-doped laser radiation such as high quantum efficiency, fast response time, low noise, Larger area and lower working voltage. Now briefly described for the 1.06 micron photomultiplier tubes, photodiodes, avalanche photodiodes and phosphorus arsenic indium photoelectric devices.