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半导体集成电路的大容量化,高密度化的发展是惊人的。若以存贮器为例,其容量每3～4年增长4倍,采用的图形尺寸每4～5年缩小一倍。随着这一发展,光刻技术也在从光学曝光向x射线、电子束曝光等新的光刻技术的研制方面发展。但是除光学光刻技术之外,其它光刻技术还没有达到大生产的水平。这可能是由设备价格和生产率决定的经济性所致,并且,也由于光学光刻技术本身不断地在改良、发展。在此主要将光学曝光设备的目前情况作一介绍,并展望未来。
The development of large-capacity and high-density semiconductor integrated circuits is remarkable. If the memory, for example, its capacity every 4 to 4 years increased by 4 times the size of the graphics used every 4 to 5 years to double. With this development, lithography has also been developed from optical exposure to the development of new lithography techniques such as x-ray and electron beam exposure. However, in addition to optical lithography, other lithography has not yet reached the level of large-scale production. This may be due to the economics of device prices and productivity, and, as well, the optical lithography itself continues to evolve and evolve. Here mainly introduce the current situation of optical exposure equipment and look forward to the future.