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A magnetic field sensor based on nano-polysilicon thin films transistors(TFTs) with Hall probes is proposed.The magnetic field sensors are fabricated on <100> orientation high resistivity(ρ>500Ω·cm) silicon substrates by using CMOS technology,which adopt nano-polysilicon thin films with thicknesses of 90 nm and heterojunction interfaces between the nano-polysilicon thin films and the high resistivity silicon substrates as the sensing layers.The experimental results show that when V_(DS) = 5.0 V,the magnetic sensitivities of magnetic field sensors based on nano-polysilicon TFTs with length-width ratios of 160μm/80μm,320μm/80μm and 480μm/80μm are 78 mV/T,55 mV/T and 34 mV/T,respectively.Under the same conditions,the magnetic sensitivity of the obtained magnetic field sensor is significantly improved in comparison with a Hall magnetic field sensor adopting silicon as the sensing layers.
A magnetic field sensor based on nano-polysilicon thin films transistors (TFTs) with Hall probes is proposed. Magnetic field sensors are fabricated on <100> orientation high resistivity (ρ> 500Ω · cm) silicon substrates by using CMOS technology, which adopt nano-polysilicon thin films with thicknesses of 90 nm and heterojunction interfaces between the nano-polysilicon thin films and the high resistivity silicon substrates as the sensing layers. The experimental results show that when V DS = 5.0 V, the magnetic sensitivities of magnetic field sensors based on nano-polysilicon TFTs with length-width ratios of 160 μm / 80 μm, 320 μm / 80 μm and 480 μm / 80 μm are 78 mV / T, 55 mV / T and 34 mV / T, respectively. sensitivity of the obtained magnetic field sensor is significantly improved in comparison with a Hall magnetic field sensor employing silicon as the sensing layers.