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本文中，发现在Ｉｎ＿ｘＧａ＿(１－ｘ)Ａｓ缓冲层上非故意掺杂的ＩｎｙＧａ＿(１－ｙ)Ａｓ／（Ａｌ）ＧａＡｓ超晶格样品中存在着两个互相反向的自建电场区，一个位于样品表面，另一个位于Ｉｎ＿ｘＧａ＿(１－ｘ)Ａｓ缓冲层和超晶格界面．据此，合理地解释了样品的光伏测试结果，并对此类样品的ＭＯＣＶＤ生长工艺给予指导．
In this paper, we found that there are two self-built electric field regions opposite to each other in the InyGa 1-x As / One on the sample surface and the other on the In_xGa_ (1-x) As buffer layer and superlattice interface. According to this, the PV test results of the samples are reasonably explained, and the MOCVD growth process of such samples is instructed.