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研究了非晶态碲镉汞(x=0.2)薄膜的暗电导率随温度变化关系,发现非晶态结构的碲镉汞材料具有明显的半导体特性,其室温禁带宽度在0.88～0.91eV之间,与通过光学方法获得的结果相符。在80～240K的温度区间非晶态碲镉汞(x=0.2)的暗电导率从1×10—8Ω—1.cm—1缓慢增大到5×10-8Ω—1.cm—1,温度大于240K时,其电导率剧烈增大到1×10—5Ω—1.cm—1,说明在240K附近非晶态碲镉汞材料的导电机制发生了变化,这对非晶态碲镉汞材料的应用研究具有重要意义。还研究了退火过程对非晶态碲镉汞薄膜电导率的影响,结果表明140℃退火后非晶态碲镉汞薄膜发生了部分晶化。
The dark conductivity of amorphous cadmium telluride (x = 0.2) thin films was studied with the change of temperature. It was found that the amorphous structure of tellurium-cadmium mercury (HgCdTe) possesses obvious semiconducting properties with room-temperature forbidden band width of 0.88 ~ 0.91eV Between the results obtained by optical method. The dark conductivity of amorphous HgCdTe (x = 0.2) gradually increased from 1 × 10-8Ω-1.cm-1 to 5 × 10-8Ω-1.cm-1 in the temperature range of 80-240K, When the temperature is higher than 240K, the conductivity increases sharply to 1 × 10-5Ω-1.cm-1, indicating that the conduction mechanism of the amorphous HgCdTe material near 240K has changed. Applied research of materials is of great significance. The effect of annealing process on the electrical conductivity of amorphous HgCdTe films was also studied. The results show that partial crystallization of the amorphous HgCdTe films occurs after annealing at 140 ℃.