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基于TSMC 0.18μm CMOS工艺,设计实现了一种多频带高线性度的单边带(SSB)混频器。该混频器以经典的电流换向结构为基础,采用电阻负载以满足多频带工作、高线性度和高带内增益平坦度要求,并节省了面积。通过集成有源巴伦将混频器输出差分信号转换成单端信号,提高了发射机的系统集成度且有利于降低功耗。测试结果表明:在2.3～2.4 GHz及3.4～3.6 GHz工作频带内,IP1dB大于0 dBm,带内增益平坦度小于0.5 dB,本振泄漏小于-47 dBm,镜像信号抑制大于36 dB,为LTE标准的无线射频前端芯片的进一步研究提供了参考。
Based on the TSMC 0.18μm CMOS process, a single-sideband (SSB) mixer with multi-band and high-linearity is designed and implemented. The mixer is based on a classic current-commutated structure that uses resistive loads to meet multi-band operation, high linearity and high-band gain flatness requirements, and saves area. By integrating the active baluns to convert the mixer output differential signal to a single-ended signal, the system integration of the transmitter is improved and power consumption is reduced. The test results show that the IP1dB is greater than 0 dBm, the in-band gain flatness is less than 0.5 dB, the local oscillation leakage is less than -47 dBm and the image signal rejection is greater than 36 dB in the operating frequency range of 2.3 to 2.4 GHz and 3.4 to 3.6 GHz. The RF front-end chip for further research provides a reference.