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美帝国际商业机器公司,在掺金双圾晶体管的制作方面,由于采用砷代替过去使用的磷杂质,因而不仅提高了载止频率,而且也提高了成品率。以前使用了磷杂质金掺杂技术,目的是为了缩短少数载流子寿命,提高双极器件的工作速度。但是,在制造工艺方面,很难控制住发射极和基极的厚度。根据去年“国际电子器件会议”上包勒的论文,在制造工艺的最后几小时,在1000℃下金扩散的同时,如果采用砷就能够容易地控制基极厚度。他对结构相同的磷掺杂和砷掺杂发射极的晶体管进行了试作,其结果,掺砷晶体管的载止频率是掺磷的3～4倍。
In the production of dumped bipolar transistors, the U.S. imperial International Business Machines Corporation not only increased the stop frequency but also increased the yield by using arsenic instead of the phosphorus impurities used in the past. Phosphorus doping gold doping techniques were used before, in order to shorten the life of minority carriers and improve the working speed of bipolar devices. However, it is difficult to control the thickness of the emitter and the base in the manufacturing process. According to a paper published last year at the International Electronic Devices Conference, the base thickness can easily be controlled with arsenic at 1,000 ° C during the last hours of the manufacturing process. He experimented with the same phosphorus-doped and arsenic-doped emitter transistors, with the result that the doping frequency of the arsenic-doped transistor was 3 to 4 times that of phosphorus.