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人们已经打算使各种光刻技术朝着０．３５μｍＩＣ设计规范的目标迈进。几年前，第一选择对象是Ｘ射线光刻。当今，对这种设计规范，人们普遍懂得使用光学方法来实现，即已经发展了的具有达到０．３５μｍ设计规范能力的ＤＵＶ和ｉ线分步曝光机。它们具有高ＮＡ、宽视场镜头；新型的移相技术，ｉ线在０．３５μｍ设计规范能力方面与ＤＵＶ相比不差上下。随着步进机技术的发展，允许用同一机身适应宽视场ｉ线和ＤＵＶ镜头，并且报道了采取通过镜头、直接参考掩模的对准方法。对ｉ线和ＤＵＶ两种机型在载物面积、逐芯片调平和环境控制方面普遍得到改进，并且达到了套刻要求。采用共性工艺技术和同一对准方式，在０．３５μｍ设计规范内，ｉ线和ＤＵＶ机更容易实现最佳状态的混合匹配应用。公司已经报道了步进机性能的实验性研究，为０．３５μｍ的设计规范奠定了基础。套刻性能是在ＣＭＯＳＩＣ的衬底上进行评价的。所研究的光刻特性使用了一般工艺以及包括移相掩模在内的更加先进的工艺技术。测试衬底上的结果表明，套刻性能符合０．３５μｍ设计规范要求。光刻结果表明０．３５μｍ线对，使用常规ｉ线和ＤＵＶ可以达到，不管怎样，采用移相掩模保证了ｉ线在０．３５μｍ规范内的工艺容限。
People have already planned to make all kinds of lithography technology toward 0.35μmIC design specification’s goal. A few years ago, the first choice was X-ray lithography. Today, it is widely accepted that this design specification is achieved using optical methods that have been developed for DUV and i-line steppers with 0.35 μm design specifications. They have a high NA, wide field of view lens; the new phase shift technology, i line in the 0.35μm design specifications and capacity compared with the DUV is not bad up and down. With the advancement of stepping technology, wide-field i-line and DUV lenses are allowed to be accommodated in the same body and methods of alignment through the lens, direct reference to the mask, are reported. On the i-line and DUV two models in the carrier area, by chip leveling and environmental control generally improved, and reached the set of carved requirements. Using common technology and the same alignment, within the 0.35μm design specification, i-line and DUV machines are more likely to achieve the best mix of applications. The company has reported an experimental study of stepper performance, laying the groundwork for a 0.35μm design specification. The overlay performance is evaluated on a CMOSIC substrate. The lithography features studied used a general process as well as more advanced process technologies including phase shift masks. The results on the test substrate indicate that the overmold performance conforms to the 0.35 μm design specification. The photolithographic results show that the 0.35 μm line pair can be achieved using conventional i-line and DUV, however, the use of phase-shifting masks ensures the i-line process tolerance within the 0.35 μm specification.