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用LPE方法在半绝缘InP衬底上制作适用于光电单片集成的InGaAs PIN光电二极管。这种光电二极管具有低的暗电流和高速响应的特点。这种光电二极管在-10V工作电压下,暗电流密度为2.5×10~(-6)A/cm~2。这个值是目前在这种材料系中所报导的最低值。在-5V工作电压下测得光电二极管的外量子效率在1.3μm波长处大于90%。在1.5μm波长处的外量子效率大于83%,这些器件的上升时间小于35PS,半峰值处全宽(FWHM)小于45PS。
The LPE method is used to fabricate an InGaAs PIN photodiode for optoelectronic monolithic integration on a semi-insulating InP substrate. This photodiode has low dark current and high speed response characteristics. This photodiode at -10V operating voltage, the dark current density of 2.5 × 10 -6 (A / cm ~ 2). This value is currently the lowest reported in this material line. The external quantum efficiency of the photodiode measured at -5 V operating voltage is greater than 90% at a wavelength of 1.3 μm. The external quantum efficiency at> 1.5μm is> 83%. The rise time of these devices is less than 35PS, and the full width at half maximum (FWHM) is less than 45PS.