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据日本NEC公司光电研究实验室报导,他们在InP波纹衬底上,包括埋层生长在内只用两步MOVPE方法制作了1.55μm GaInAsP/InP DFB-BH激光器。两面解理的器件其最低阈值达到9mA。作者确信在采用InP光栅,MOVPE生长的DFB激光器中这是最低的阈值。最大输出功率可达20mW。在单模工作
According to Japan’s NEC optoelectronics research laboratory reported that they in the InP corrugated substrate, including the growth of the buried layer only two-step MOVPE method produced 1.55μm GaInAsP / InPDFB-BH laser. The lowest threshold of the device with both sides cleaved to 9mA. The authors believe this is the lowest threshold in DFPE lasers with InP gratings and MOVPE growth. The maximum output power of up to 20mW. Work in single mode