X-band inverse class-F GaN internally-matched power amplifier

• 作 者: 赵博超 卢阳 韩文哲 郑佳欣 张恒爽 马佩军 马晓华 郝跃
• 机 构: School of Microelectronics,Xidian University,School of Advanced Material and Nanotechnology,Xidian U
• 出 处: Chinese Physics B
• 发表日期: 2016年09期
• 关键词: amplifier inverse transistor harmonic matched impedance realized matching drain

An X-band inverse class-F power amplifier is realized by a 1-mm Al Ga N/Ga N high electron mobility transistor(HEMT).The intrinsic and parasitic components inside the transistor,especially output capacitor Cds,influence the harmonic impedance heavily at the X-band,so compensation design is used for meeting the harmonic condition of inverse class-F on the current source plane.Experiment results show that,in the continuous-wave mode,the power amplifier achieves 61.7% power added efficiency(PAE),which is 16.3% higher than the class-AB power amplifier realized by the same kind of HEMT.To the best of our knowledge,this is the first inverse class-F Ga N internally-matched power amplifier,and the PAE is quite high at the X-band.

An intrinsic X-band inverse class-F power amplifier is realized by a 1-mm Al Ga N / Ga N high electron mobility transistor (HEMT). The intrinsic and parasitic components inside the transistor, especially output capacitor Cds, influence the harmonic impedance heavily at the X-band, so compensation design is used for meeting the harmonic condition of inverse class -F on the current source plane. Experimental result show that in the continuous-wave mode, the power amplifier achieves 61.7% power added efficiency (PAE ), which is 16.3% higher than the class-AB power amplifier realized by the same kind of HEMT.To the best of our knowledge, this is the first inverse class -F Ga N internally-matched power amplifier, and the PAE is quite high at the X-band.