High-temperature characteristics of Al_xGa_(1-x)N/GaN Schottky diodes

• 作 者: 张小玲 李菲 吕长志 谢雪松 李英 Mohammad S N
• 机 构: Department of Electronic Information and Control Engineering,Beijing University of Technology,Depart
• 出 处: 半导体学报
• 发表日期: 2009年03期
• 关键词: Schottky piezoelectric capacitance leakage distinctly tunneling thick breakdown

High-temperature characteristics of the metal/AlxGa1-xN/GaN M/S/S(M/S/S) diodes have been studied with current-voltage(I-V) and capacitance-voltage(C-V) measurements at high temperatures.Due to the presence of the piezoelectric polarization field and a quantum well at the AlxGa1-xN/GaN interface,the AlxGa1-xN/GaN diodes show properties distinctly different from those of the AlxGa1-xN diodes.For the AlxGa1-xN/GaN diodes,an increase in temperature accompanies an increase in barrier height and a decrease in ideality factor,while the AlxGa1-xN diodes are opposite.Furthermore,at room temperature,both reverse leakage current and reverse break-down voltage are superior for the AlxGa1-xN/GaN diodes to those for the AlxGa1-xN diodes.

High-temperature characteristics of the metal / AlxGa1-xN / GaN M / S / S (M / S / S) diodes have been studied with current-voltage (IV) and capacitance-voltage (CV) measurements at high temperatures. the presence of the piezoelectric polarization field and a quantum well at the AlxGa1-xN / GaN interface, the AlxGa1-xN / GaN diodes show properties distinctly different from those of the AlxGa1-xN diodes. For the AlxGa1-xN / GaN diodes, an increase in temperature will be an increase in barrier height and a decrease in ideality factor, while the AlxGa1-xN diodes are opposite. Morerther, at room temperature, both reverse leakage current and reverse break-down voltage are superior for the AlxGa1-xN / GaN diodes to those for the AlxGa1-xN diodes.